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Toshiba Semiconductor RN2610(TE85L,F) — Memory (DRAM / SRAM / Flash / EEPROM)

Toshiba RN2610(TE85L,F) Dual PNP Pre-Biased Transistor, 50V

MPNRN2610(TE85L,F)
End of Life

Toshiba RN2610(TE85L,F) dual PNP pre-biased transistor, 50V Vce breakdown, 100mA collector current, 200MHz transition frequency, 300mW power dissipation, SC-74/SOT-457 SM6 package, surface mount.

$0.49Ref. price · indicative, final on quote
PackagingSC-74, SOT-457
RoHSRoHS Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

RN2610(TE85L,F) specifications
ParameterValue
MountingSurface Mount
FET type2 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 1mA, 5V
Power - max300mW
Frequency200MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-74, SOT-457
Resistor - base (R1)4.7kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA

Product details

Dual PNP pre-biased transistor in a small SM6 package

The Toshiba RN2610(TE85L,F) is a dual PNP pre-biased transistor in an SC-74 (SOT-457) surface-mount package, designated SM6. Each transistor integrates two bias resistors — a 4.7 kΩ base resistor (R1) — eliminating the need for external biasing components in common switching and interface circuits. The 200MHz transition frequency supports medium-speed switching up into the low-MHz range. Maximum power dissipation is 300mW, which sets the thermal budget for the SM6 package — derate accordingly if both transistors are conducting simultaneously near the current limit.

Frequently asked questions

What is the maximum power dissipation of RN2610(TE85L,F)?

The maximum power dissipation is 300mW. This is the total for the SM6 package; when both transistor channels are active, the dissipation per channel must be derated to stay within the package limit.

What is the maximum collector current of RN2610?

The maximum continuous collector current (Ic) is 100mA per transistor channel.