Toshiba Semiconductor RN2610(TE85L,F) — Memory (DRAM / SRAM / Flash / EEPROM)
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Toshiba Semiconductor / Memory (DRAM / SRAM / Flash / EEPROM)

Toshiba RN2610(TE85L,F) Dual PNP Pre-Biased Transistor, 50V

MPN RN2610(TE85L,F)
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Toshiba RN2610(TE85L,F) dual PNP pre-biased transistor, 50V Vce breakdown, 100mA collector current, 200MHz transition frequency, 300mW power dissipation, SC-74/SOT-457 SM6 package, surface mount.

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[SPEC] Essential Parameters Snapshot Full Specifications (12)
Package / Case SC-74, SOT-457

Full Technical Specifications

12 Parameters
RN2610(TE85L,F) specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET type2 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 1mA, 5V
Power - max300mW
Frequency - transition200MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-74, SOT-457
Resistor - base (R1)4.7kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA
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Technical Details & Description

Dual PNP pre-biased transistor in a small SM6 package

The Toshiba RN2610(TE85L,F) is a dual PNP pre-biased transistor in an SC-74 (SOT-457) surface-mount package, designated SM6. Each transistor integrates two bias resistors — a 4.7 kΩ base resistor (R1) — eliminating the need for external biasing components in common switching and interface circuits. The 200MHz transition frequency supports medium-speed switching up into the low-MHz range. Maximum power dissipation is 300mW, which sets the thermal budget for the SM6 package — derate accordingly if both transistors are conducting simultaneously near the current limit.

Frequently asked questions

What is the maximum power dissipation of RN2610(TE85L,F)?

The maximum power dissipation is 300mW. This is the total for the SM6 package; when both transistor channels are active, the dissipation per channel must be derated to stay within the package limit.

What is the maximum collector current of RN2610?

The maximum continuous collector current (Ic) is 100mA per transistor channel.

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