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Toshiba Semiconductor RN2427TE85LF — Discrete Semiconductors

Toshiba RN2427TE85LF PNP Pre-Biased, 800 mA, S-Mini

MPNRN2427TE85LF
End of Life

Toshiba Semiconductor RN2427TE85LF PNP pre-biased transistor, 50 V VCEO, 800 mA Ic, 200 mW, S-Mini SOT-23-3 package, Tape & Reel.

$0.45Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
StockIn Stock (17)
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

RN2427TE85LF Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)800 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce90 @ 100mA, 1V
Power - max200 mW
Frequency200 MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)2.2 kOhms
Resistor - emitter base (R2)10 kOhms
Vce saturation (Max) @ ib, ic250mV @ 1mA, 50mA

Product details

800 mA PNP with built-in bias network

The Toshiba RN2427TE85LF is a PNP pre-biased transistor rated for 800 mA continuous collector current and 50 V collector-emitter breakdown. The 2.2 kOhm base resistor and 10 kOhm emitter-base resistor form a complete bias network inside the S-Mini SOT-23-3 package — no external resistors needed on the base leg.

What the ratings mean on the bench

800 mA collector current and 200 mW max power mean this part drives small relays, solenoids, or indicator loads without a heatsink. The 200 MHz transition frequency is well above the switching speed of most relay coils or DC loads — the transistor stays in saturation during the on-time, not in the linear region where dissipation climbs. Vce saturation is 250 mV max at 50 mA collector current with 1 mA base drive — the on-state voltage drop is low enough that a 5 V logic rail driving the base through the internal 2.2 kOhm resistor will saturate the output cleanly. DC current gain minimum of 90 at 100 mA and 1 Vce means the transistor has enough beta to stay saturated with modest base current from a microcontroller GPIO pin.

Frequently asked questions

How do I get current pricing and availability for RN2427TE85LF?

The RN2427TE85LF is an active Toshiba part sourced through independent distribution.

Will RN2427TE85LF drop into a board specified around RN2426(TE85L,F)?

The RN2426(TE85L,F) uses a 1 kOhm base resistor instead of the RN2427's 2.2 kOhm base resistor; the emitter-base resistor is 10 kOhm on both. The S-Mini SOT-23-3 footprint is identical, so the part fits the same PCB pads, but the base current delivered from a given drive voltage differs — check the saturation margin at your drive condition before swapping.

What is RN2427TE85LF's listed power dissipation?

200 mW maximum power dissipation in the S-Mini SOT-23-3 package. This is the total power limit at 25°C ambient; derate for higher ambient temperature per the standard SOT-23 thermal resistance.