RN2413TE85LF
Toshiba Semiconductor
Tape & Reel (TR); Cut Tape (CT)Surface MountPNP - Pre-Biased
Ref. price$0.32
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Toshiba Semiconductor RN24 Discrete Semiconductors Series
5 variants · Toshiba Semiconductor
About the Toshiba Semiconductor RN24 Discrete Semiconductors Series
The Toshiba Semiconductor RN24 Discrete Semiconductors Series series groups 5 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. The listed variants share a common case of TO-236-3, SC-59, SOT-23-3, current - collector (Ic) of 100 mA and FET type of PNP - Pre-Biased. Variants differ by current - collector cutoff, DC current gain (hFE) (Min) @ ic, vce and resistor - base (R1), so you can match the exact current - collector cutoff your application requires using the selection guide below.
Select a variant by
- Current - collector cutoff
- 100nA (ICBO) · 500nA
- DC current gain (hFE) (Min) @ ic, vce
- 30 @ 10mA, 5V · 50 @ 10mA, 5V · 120 @ 1mA, 5V
- Resistor - base (R1)
- 10 kOhms · 47 kOhms
- Resistor - emitter base (R2)
- 4.7 kOhms · 10 kOhms
Shared specifications
- Case
- TO-236-3, SC-59, SOT-23-3
- Current - collector (Ic)
- 100 mA
- FET type
- PNP - Pre-Biased
- Frequency
- 200 MHz
- Mounting
- Surface Mount
- Package
- Tape & Reel (TR); Cut Tape (CT)
- Power - max
- 200 mW
- Vce saturation (Max) @ ib, ic
- 300mV @ 250µA, 5mA
- Voltage - collector emitter breakdown
- 50 V
Variant comparison
| Parameter | RN2413TE85LF | RN2417,LXHF | RN2418,LF |
|---|---|---|---|
| Current - collector cutoff | 100nA (ICBO) | 500nA | 500nA |
| DC current gain (hFE) (Min) @ ic, vce | 120 @ 1mA, 5V | 30 @ 10mA, 5V | 50 @ 10mA, 5V |
| Resistor - base (R1) | 47 kOhms | 10 kOhms | 47 kOhms |
| Resistor - emitter base (R2) | — | 4.7 kOhms | 10 kOhms |
Request a quote on any Toshiba Semiconductor RN24 Discrete Semiconductors Series part number and we confirm price, availability and lead time per line — including end-of-life and allocation-constrained variants.