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Toshiba Semiconductor RN2422TE85LF — Discrete Semiconductors
Toshiba Semiconductor

Toshiba RN2422TE85LF PNP Pre-Biased, 50V 0.8A, S-Mini

MPNRN2422TE85LF
End of Life

Toshiba RN2422TE85LF PNP pre-biased transistor, 50 V collector-emitter breakdown, 800 mA collector current, 200 mW power dissipation, S-Mini (SOT-23-3) surface-mount package, Tape & Reel.

$0.45Ref. price · indicative, final on quote
RN2422TE85LF datasheet
PackagingTO-236-3, SC-59, SOT-23-3
StockContact for availability
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

RN2422TE85LF Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)800 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce65 @ 100mA, 1V
Power - max200 mW
Frequency200 MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)2.2 kOhms
Resistor - emitter base (R2)2.2 kOhms
Vce saturation (Max) @ ib, ic250mV @ 1mA, 50mA

Product details

Saturation and gain at operating point

The RN2422TE85LF: Vce(sat) is specified at 250 mV maximum with 1 mA base drive into 50 mA collector current — the low saturation voltage keeps conduction losses under 12.5 mW at that point, well within the 200 mW package limit. DC current gain (hFE) is a minimum of 65 at 100 mA, 1 Vce, ensuring the transistor saturates reliably when driven from a logic gate through the integrated 2.2 kOhm base resistor. Transition frequency of 200 MHz means the device switches cleanly at PWM frequencies up to several hundred kilohertz; the limiting factor in practice is the base charge storage, not the ft.

Supplied in the S-Mini package (JEDEC TO-236-3 / SC-59 / SOT-23-3), the three-lead footprint is standard for small-signal transistors — the same land pattern accepts NPN siblings like the RN1422TE85LF without a board spin.

Frequently asked questions

What is the closest functional second-source to RN2422TE85LF?

The RN2427TE85LF is the closest peer: same PNP pre-biased type, same 2.2 kOhm base resistor (R1), same 50 V / 0.8 A ratings, same S-Mini package. The only difference is the emitter-base resistor (R2) — 10 kOhms on the RN2427 versus 2.2 kOhms on the RN2422. The higher R2 value on the RN2427 reduces the off-state leakage current at the cost of slightly slower turn-off. A board designed for the RN2422 can accept the RN2427 without layout changes, but the switching threshold shifts.

Will RN2422TE85LF drop into a board laid out for RN2427TE85LF without rewiring?

Yes — both share the same S-Mini (SOT-23-3) footprint and pinout. The base and collector connections are identical. The only parametric difference is the emitter-base resistor value (2.2 kOhms vs 10 kOhms), which affects the off-state leakage and the base drive current drawn from the upstream logic output. Confirm the base drive margin at the logic output's current-sourcing capability before substituting.