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Toshiba Semiconductor RN2413TE85LF — Discrete Semiconductors
Toshiba Semiconductor

RN2413TE85LF PNP Pre-Biased Transistor, 50V, 100mA, S-Mini

MPNRN2413TE85LF
End of Life

Toshiba Semiconductor RN2413TE85LF PNP pre-biased transistor, 50 V collector-emitter breakdown, 100 mA collector current, 200 mW power dissipation, S-Mini SOT-23-3 package, Tape & Reel.

$0.32Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
StockIn Stock (28)
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

RN2413TE85LF Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 1mA, 5V
Power - max200 mW
Frequency200 MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA

Product details

PNP pre-biased transistor, 50 V, 100 mA

The RN2413TE85LF is a PNP pre-biased transistor from Toshiba, rated for 50 V collector-emitter breakdown and 100 mA continuous collector current, dissipating up to 200 mW.

S-Mini SOT-23 footprint

Housed in the S-Mini package (TO-236-3 / SC-59 / SOT-23-3), it uses a standard three-lead SOT-23 footprint that places reliably on most reflow profiles with minimal tombstoning risk. Surface-mount assembly with Tape & Reel or Cut Tape packaging suits both high-volume and prototype runs.

Frequently asked questions

What is the closest functional second-source for RN2413TE85LF?

The RN2418,LF is a PNP pre-biased transistor with the same 47 kOhm base resistor, 50 V breakdown, 100 mA collector current, and 200 mW power rating. The key difference is that RN2418 adds a 10 kOhm emitter-base resistor (R2), which changes the off-state leakage and input threshold. Check whether your circuit relies on the internal bias network before substituting.