Active production — what that means for your BOM
The RN2105,LXHF(CT: This PNP pre-biased transistor carries a 50 V collector-emitter breakdown and 100 mA continuous collector current rating, with a 100 mW power dissipation limit in the SC-75 (SOT-416) surface-mount package.
Built-in bias resistors simplify the BOM
The base resistor R1 is 2.2 kΩ and the emitter-base resistor R2 is 47 kΩ, so the transistor turns on with a predictable base current from a logic-level or MCU GPIO without external resistors.
AEC-Q101 qualification — automotive-grade reliability
The RN2105,LXHF(CT is qualified to AEC-Q101, the automotive discrete semiconductor stress-test standard, covering temperature cycling, high-temperature reverse bias, and ESD robustness for under-hood or cabin electronics. Its 200 MHz transition frequency supports switching applications in the low-MHz range, such as gate drive buffers, relay coil drivers, or signal-level translation in automotive control modules.