RN2110,LF(CT
Toshiba Semiconductor
Tape & Reel (TR); Cut Tape (CT)Surface MountPNP - Pre-Biased
Ref. price$0.2
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Toshiba Semiconductor RN21 Discrete Semiconductors Series
6 variants · Toshiba Semiconductor
About the Toshiba Semiconductor RN21 Discrete Semiconductors Series
The Toshiba Semiconductor RN21 Discrete Semiconductors Series series groups 6 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. The listed variants share a common case of SC-75, SOT-416, current - collector (Ic) of 100 mA and FET type of PNP - Pre-Biased. Variants differ by current - collector cutoff, DC current gain (hFE) (Min) @ ic, vce and resistor - base (R1), so you can match the exact current - collector cutoff your application requires using the selection guide below.
Select a variant by
- Current - collector cutoff
- 100nA (ICBO) · 500nA
- DC current gain (hFE) (Min) @ ic, vce
- 80 @ 10mA, 5V · 120 @ 1mA, 5V
- Resistor - base (R1)
- 2.2 kOhms · 4.7 kOhms
Shared specifications
- Case
- SC-75, SOT-416
- Current - collector (Ic)
- 100 mA
- FET type
- PNP - Pre-Biased
- Frequency
- 200 MHz
- Mounting
- Surface Mount
- Package
- Tape & Reel (TR); Cut Tape (CT)
- Power - max
- 100 mW
- Vce saturation (Max) @ ib, ic
- 300mV @ 250µA, 5mA
- Voltage - collector emitter breakdown
- 50 V
Variant comparison
| Parameter | RN2110,LF(CT | RN2105,LXHF(CT |
|---|---|---|
| Current - collector cutoff | 100nA (ICBO) | 500nA |
| DC current gain (hFE) (Min) @ ic, vce | 120 @ 1mA, 5V | 80 @ 10mA, 5V |
| Resistor - base (R1) | 4.7 kOhms | 2.2 kOhms |
Request a quote on any Toshiba Semiconductor RN21 Discrete Semiconductors Series part number and we confirm price, availability and lead time per line — including end-of-life and allocation-constrained variants.
