RN1903,LF(CT
Toshiba Semiconductor
TRANS 2NPN PREBIAS 0.2W US6
[IN STOCK] In Stock: 1,325 pcs
MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Mounting | Surface Mount |
| FET type | 2 NPN - Pre-Biased (Dual) |
| Voltage - collector emitter breakdown | 50V |
| Current - collector (Ic) | 100mA |
| Current - collector cutoff | 100nA (ICBO) |
| DC current gain (hFE) (Min) @ ic, vce | 70 @ 10mA, 5V |
| Power - max | 200mW |
| Frequency - transition | 250MHz |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | 6-TSSOP, SC-88, SOT-363 |
| Resistor - base (R1) | 22kOhms |
| Resistor - emitter base (R2) | 22kOhms |
| Vce saturation (Max) @ ib, ic | 300mV @ 250µA, 5mA |
RN1903,LF(CT
[ALLOC] verified