Toshiba Semiconductor RN1710JE(TE85L,F) — Memory (DRAM / SRAM / Flash / EEPROM)
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Toshiba Semiconductor / Memory (DRAM / SRAM / Flash / EEPROM)

RN1710JE(TE85L,F) Dual NPN Pre-Biased Transistor, 50V, 100mA

MPN RN1710JE(TE85L,F)
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Toshiba RN1710JE(TE85L,F) dual NPN pre-biased transistor, 50V VCEO, 100mA Ic, 250MHz fT, SOT-553 surface mount package, Tape & Reel.

In Stock: 3,868 pcs
MOQ: 1 pcs
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$0.41
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$0.41 / ea

3,868 in stock — maximum per order · 3–4 days lead time

$0.37 / ea from 10 pcs

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[SPEC] Essential Parameters Snapshot Full Specifications (12)
Package / Case SOT-553

Full Technical Specifications

12 Parameters
RN1710JE(TE85L,F) specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET type2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 1mA, 5V
Power - max100mW
Frequency - transition250MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-553
Resistor - base (R1)4.7kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA
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Technical Details & Description

Dual pre-biased NPN in SOT-553

The Toshiba RN1710JE(TE85L,F) integrates two NPN transistors with internal bias resistors in a single SOT-553 package, each with a base resistor of 4.7 kΩ. The emitter-coupled pair shares a common emitter node, simplifying layout for differential or cascode stages where two matched transistors are needed.

250 MHz transition frequency

With a transition frequency of 250 MHz, this part can handle fast switching in signal conditioning, level translation, or oscillator circuits. The integrated bias resistors eliminate two external resistors per transistor, cutting BOM count and board area.

Frequently asked questions

What is the hFE of RN1710JE at 1 mA?

The DC current gain (hFE) is 120 minimum at 1 mA collector current with 5 V VCE.

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