RN1705,LF

Toshiba Semiconductor

Toshiba RN1705,LF dual NPN pre-biased transistor, 100 mA collector current, 50 V Vce, 200 mW, SOT-353 (USV) package, tape and reel / cut tape.

Toshiba Semiconductor RN1705,LF
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[IN STOCK] In Stock: 242 pcs
$0.36/ pc

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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

RN1705,LF specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET type2 NPN - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce80 @ 10mA, 5V
Power - max200mW
Frequency - transition250MHz
PackageTape & Reel (TR); Cut Tape (CT)
Case5-TSSOP, SC-70-5, SOT-353
Resistor - base (R1)2.2kOhms
Resistor - emitter base (R2)47kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA

Technical details

What the resistor values do for your switching threshold

The RN1705,LF: That ratio sets the turn-on threshold: the base sees roughly 2.2 kΩ in series, so the input voltage needed to saturate the transistor is higher than a bare NPN, but the 47 kΩ to ground ensures a clean off-state with less than 500 nA leakage. Rated for 100 mA continuous collector current with a 50 V collector-emitter breakdown, it handles typical logic-level loads like relay coils, LED indicators, or small signal switching where you want to eliminate external base resistors.

The dual-transistor layout shares the emitter for both devices, common in BRT arrays for space-constrained boards. Available in tape-and-reel or cut-tape quantities for prototyping or production runs.

RN1705,LF
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