Dual NPN with integrated bias — one SOT-553 replaces two transistors plus four resistors
The Toshiba RN1705JE(TE85L,F) is a dual NPN pre-biased transistor array in a SOT-553 package. Each transistor includes a built-in 2.2 kΩ base resistor (R1) and a 47 kΩ emitter-base resistor (R2), eliminating the need for external bias components in switching and driver stages. Collector current is rated 100 mA maximum, with a collector-emitter breakdown voltage of 50 V. The transition frequency of 250 MHz supports switching applications up to the low-MHz range. Total package dissipation is 100 mW. The emitter-coupled pair configuration shares a common emitter node, making it suited for differential driver stages, push-pull outputs, or dual-load switching where the transistors switch in phase.
It is RoHS compliant per the listing.
The SOT-553 footprint (Supplier Device Package: ESV) is compact — 1.6 mm × 1.6 mm typical — which suits dense PCB layouts in portable or space-constrained designs.