RN1403,LF

Toshiba Semiconductor

Toshiba Semiconductor RN1403,LF NPN pre-biased transistor, 50 V collector-emitter breakdown, 100 mA collector current, 22 kOhms base and emitter-base resistors, 250 MHz transition frequency, SOT-23-3 S-Mini package, Tape & Reel.

Toshiba Semiconductor RN1403,LF
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MOQ 20 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

RN1403,LF specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce70 @ 10mA, 5V
Power - max200 mW
Frequency - transition250 MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)22 kOhms
Resistor - emitter base (R2)22 kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA

Technical details

Bias resistor network sets the on/off threshold

The RN1403,LF integrates a 22 kOhm base resistor (R1) and a 22 kOhm emitter-base resistor (R2) — a 1:1 divider that defines the input voltage at which the transistor turns on. With both resistors equal, the switch-on threshold sits at roughly half the drive voltage, so a 5 V logic signal needs to exceed about 2.5 V at the base pin to saturate the output. This fixed ratio eliminates the external bias resistor pair, saving one component per channel on the board.

50 V breakdown and 100 mA continuous collector current

Rated for 50 V collector-emitter breakdown and 100 mA continuous collector current, this pre-biased NPN handles typical low-side switching of relay coils, indicator LEDs, or small solenoid valves in 24 V industrial logic circuits. The 200 mW power dissipation limit in the SOT-23-3 package means the actual continuous current at elevated ambient temperature is lower than the 100 mA headline — at 85 °C ambient the derating curve typically halves the allowable dissipation, so a 50 mA load is a safer continuous target without exceeding the junction temperature.

250 MHz transition frequency and saturation voltage

With a 250 MHz transition frequency, the RN1403,LF switches fast enough for PWM dimming of LEDs at tens of kilohertz or for driving the base of a larger power transistor in a Darlington pair. The minimum DC current gain of 70 at 10 mA collector current ensures the base drive from a microcontroller GPIO (typically 2-5 mA) saturates the output reliably.

RN1403,LF
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