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Toshiba Semiconductor RN1402,LF — Discrete Semiconductors

Toshiba RN1402,LF NPN Pre-Biased Transistor, 50V 100mA

MPNRN1402,LF
End of Life

Toshiba Semiconductor RN1402,LF NPN pre-biased transistor, 50 V collector-emitter breakdown, 100 mA collector current, 200 mW power dissipation, S-Mini (SOT-23-3) surface-mount package, Tape & Reel.

$0.21Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

RN1402,LF specifications
ParameterValue
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce50 @ 10mA, 5V
Power - max200 mW
Frequency250 MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)10 kOhms
Resistor - emitter base (R2)10 kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA

Product details

Active lifecycle — no end-of-life pressure on this BOM line

The RN1402,LF: This simplifies inventory planning for a line that uses this pre-biased transistor in signal-level switching — you are not chasing a sunset part. ROHS3 compliance is confirmed, which keeps the part acceptable across current regulatory markets without exemption tracking.

Pre-biased NPN — integrated resistors shrink the BOM

The resistor divider sets the bias point externally, so you eliminate two discrete resistors from the board — a clean BOM consolidation for high-volume or space-constrained designs. The 50 V collector-emitter breakdown and 100 mA maximum collector current cover general-purpose switching of logic-level loads, relay coils, or small signal lamps. The 200 mW power dissipation limits continuous conduction to light duty — this is a signal transistor, not a pass element.

S-Mini (SOT-23-3) — a standard footprint for automated assembly

The S-Mini package (also known as TO-236-3, SC-59, or SOT-23-3) is a widely used three-lead surface-mount footprint. The 250 MHz transition frequency means it switches fast enough for typical digital interface or low-speed switching applications without introducing propagation delay issues. The reel format is the standard for volume production; the cut tape suits prototype or low-volume builds.

Saturation and gain — what the numbers mean for the switching decision

Vce saturation is specified at 300 mV maximum with a 250 µA base current driving 5 mA collector current. This guarantees the transistor will saturate with a base drive of about 200 µA when switching 10 mA — a ratio that simplifies drive circuit design from a microcontroller GPIO.

Frequently asked questions

What is the closest functional second-source to RN1402,LF?

The RN1402,LXHF is the automotive-grade sibling — it shares the same 10 kOhm / 10 kOhm resistor values, 50 V breakdown, 100 mA collector current, and S-Mini package, but adds AEC-Q101 qualification for automotive applications. The standard RN1402,LF drops into the same footprint without board changes.