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Toshiba Semiconductor RN14 Discrete Semiconductors Series

5 variants · Toshiba Semiconductor

About the Toshiba Semiconductor RN14 Discrete Semiconductors Series

The Toshiba Semiconductor RN14 Discrete Semiconductors Series series groups 5 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. The listed variants share a common case of TO-236-3, SC-59, SOT-23-3, current - collector (Ic) of 100 mA and current - collector cutoff of 500nA. Variants differ by DC current gain (hFE) (Min) @ ic, vce, resistor - base (R1) and resistor - emitter base (R2), so you can match the exact DC current gain (hFE) (Min) @ ic, vce your application requires using the selection guide below.

Select a variant by

DC current gain (hFE) (Min) @ ic, vce
50 @ 10mA, 5V · 70 @ 10mA, 5V
Resistor - base (R1)
10 kOhms · 22 kOhms
Resistor - emitter base (R2)
10 kOhms · 22 kOhms

Shared specifications

Case
TO-236-3, SC-59, SOT-23-3
Current - collector (Ic)
100 mA
Current - collector cutoff
500nA
FET type
NPN - Pre-Biased
Frequency
250 MHz
Mounting
Surface Mount
Package
Tape & Reel (TR); Cut Tape (CT)
Power - max
200 mW
Vce saturation (Max) @ ib, ic
300mV @ 250µA, 5mA
Voltage - collector emitter breakdown
50 V

Variant comparison

ParameterRN1402,LFRN1403,LF
DC current gain (hFE) (Min) @ ic, vce50 @ 10mA, 5V70 @ 10mA, 5V
Resistor - base (R1)10 kOhms22 kOhms
Resistor - emitter base (R2)10 kOhms22 kOhms

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