RN1106MFV,L3F

Toshiba Semiconductor

Toshiba Semiconductor RN1106MFV,L3F NPN pre-biased transistor, 50 V collector-emitter breakdown, 100 mA collector current, 150 mW power dissipation, SOT-723 surface-mount package.

Toshiba Semiconductor RN1106MFV,L3F
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[IN STOCK] In Stock: 8,890 pcs
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MOQ 10 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

RN1106MFV,L3F specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce80 @ 10mA, 5V
Power - max150 mW
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-723
Resistor - base (R1)4.7 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 5mA

Technical details

Parametric limits for the bench

The RN1106MFV,L3F: Rated for a maximum collector-emitter breakdown of 50 V and a continuous collector current of 100 mA, with a power dissipation ceiling of 150 mW. The saturation voltage is specified at 300 mV maximum when driven with 500 µA base current into 5 mA collector current — useful for low-voltage switching where headroom is tight. Collector cutoff current is a maximum 500 nA, so leakage won't pull a logic input high in off-state.

SOT-723 footprint and hand-solderability

Housed in a SOT-723 package (Toshiba's VESM designation), this is a very small surface-mount package — roughly 1.2 mm × 1.2 mm with a 0.4 mm lead pitch. It's hand-solderable with a fine-tip iron and magnification, but the small pad size means a stencil and reflow profile give more consistent results for any volume above a handful of boards.

Availability and current pricing confirmed at RFQ time.

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