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Toshiba Semiconductor RN1106MFV,L3F — Discrete Semiconductors

Toshiba RN1106MFV,L3F NPN Pre-Biased Transistor, 50V, 0.1A

MPNRN1106MFV,L3F
End of Life

Toshiba Semiconductor RN1106MFV,L3F NPN pre-biased transistor, 50 V collector-emitter breakdown, 100 mA collector current, 150 mW power dissipation, SOT-723 surface-mount package.

$0.16Ref. price · indicative, final on quote
Toshiba Semiconductor RN1106MFV,L3F datasheet (PDF)
PackagingSOT-723
RoHSRoHS Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

RN1106MFV,L3F specifications
ParameterValue
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce80 @ 10mA, 5V
Power - max150 mW
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-723
Resistor - base (R1)4.7 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 5mA

Product details

Parametric limits for the bench

The RN1106MFV,L3F: Rated for a maximum collector-emitter breakdown of 50 V and a continuous collector current of 100 mA, with a power dissipation ceiling of 150 mW. The saturation voltage is specified at 300 mV maximum when driven with 500 µA base current into 5 mA collector current — useful for low-voltage switching where headroom is tight. Collector cutoff current is a maximum 500 nA, so leakage won't pull a logic input high in off-state.

SOT-723 footprint and hand-solderability

Housed in a SOT-723 package (Toshiba's VESM designation), this is a very small surface-mount package — roughly 1.2 mm × 1.2 mm with a 0.4 mm lead pitch. It's hand-solderable with a fine-tip iron and magnification, but the small pad size means a stencil and reflow profile give more consistent results for any volume above a handful of boards.

Availability and current pricing confirmed at RFQ time.

Frequently asked questions

How can I order the RN1106MFV,L3F or check availability?

The RN1106MFV,L3F is an active Toshiba part, RoHS compliant, and we source it through independent distribution.

What is the difference between RN1106MFV,L3F and RN1104MFV,L3F?

Both are NPN pre-biased transistors in the same SOT-723 package with identical 50 V / 100 mA / 150 mW ratings. The difference is the built-in resistor values: RN1106 uses 4.7 kOhm base and 47 kOhm emitter-base, while RN1104 uses 47 kOhm for both resistors. The RN1106 provides a higher base-drive current for a given input voltage, so it saturates harder with the same drive signal.

What compliance documentation does Toshiba provide for this part?

The RN1106MFV,L3F is RoHS Compliant per Toshiba's lifecycle record. Additional compliance documents (REACH, conflict minerals) are typically available through the manufacturer's product page or upon request.