RN1107ACT(TPL3)
Toshiba Semiconductor
Tape & Reel (TR); Cut Tape (CT)Surface MountNPN - Pre-Biased
Ref. price$0.34
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Toshiba Semiconductor RN11 Discrete Semiconductors Series
5 variants · Toshiba Semiconductor
About the Toshiba Semiconductor RN11 Discrete Semiconductors Series
The Toshiba Semiconductor RN11 Discrete Semiconductors Series series groups 5 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. The listed variants share a common current - collector cutoff of 500nA, DC current gain (hFE) (Min) @ ic, vce of 80 @ 10mA, 5V and FET type of NPN - Pre-Biased. Variants differ by case, current - collector (Ic) and power - max, so you can match the exact case your application requires using the selection guide below.
Select a variant by
- Case
- SC-101, SOT-883 · SOT-723
- Current - collector (Ic)
- 80 mA · 100 mA
- Power - max
- 100 mW · 150 mW
- Resistor - base (R1)
- 4.7 kOhms · 10 kOhms
- Vce saturation (Max) @ ib, ic
- 150mV @ 250µA, 5mA · 300mV @ 500µA, 5mA
Shared specifications
- Current - collector cutoff
- 500nA
- DC current gain (hFE) (Min) @ ic, vce
- 80 @ 10mA, 5V
- FET type
- NPN - Pre-Biased
- Mounting
- Surface Mount
- Package
- Tape & Reel (TR); Cut Tape (CT)
- Resistor - emitter base (R2)
- 47 kOhms
- Voltage - collector emitter breakdown
- 50 V
Variant comparison
| Parameter | RN1107ACT(TPL3) | RN1106MFV,L3F |
|---|---|---|
| Case | SC-101, SOT-883 | SOT-723 |
| Current - collector (Ic) | 80 mA | 100 mA |
| Power - max | 100 mW | 150 mW |
| Resistor - base (R1) | 10 kOhms | 4.7 kOhms |
| Vce saturation (Max) @ ib, ic | 150mV @ 250µA, 5mA | 300mV @ 500µA, 5mA |
Request a quote on any Toshiba Semiconductor RN11 Discrete Semiconductors Series part number and we confirm price, availability and lead time per line — including end-of-life and allocation-constrained variants.
