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Toshiba Semiconductor RN1103MFV,L3F — Discrete Semiconductors

Toshiba RN1103MFV,L3F NPN Pre-Biased, 50V 100mA SOT-723

MPNRN1103MFV,L3F
End of Life

Toshiba RN1103MFV,L3F NPN Pre-Biased transistor, 50 V VCEO, 100 mA Ic, 150 mW, SOT-723 (VESM), Tape & Reel.

$0.17Ref. price · indicative, final on quote
Toshiba Semiconductor RN1103MFV,L3F datasheet (PDF)
PackagingSOT-723
RoHSRoHS Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

RN1103MFV,L3F specifications
ParameterValue
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce70 @ 10mA, 5V
Power - max150 mW
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-723
Resistor - base (R1)22 kOhms
Resistor - emitter base (R2)22 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 5mA

Product details

22 kOhm base network — predictable turn-on without external resistors

The RN1103MFV,L3F integrates a 22 kOhm base resistor (R1) and a 22 kOhm emitter-base resistor (R2) in a single SOT-723 package, so the transistor switches on at a fixed input voltage threshold without requiring external biasing components. With a 100 mA maximum collector current and a 50 V collector-emitter breakdown voltage, this part is sized for signal-level loads — relay coils, LED drivers, or logic-level interface circuits — not for power switching. The 150 mW power dissipation limit in the SOT-723 package means the continuous collector current must be derated at elevated ambient temperatures; at 100 mA the 300 mV Vce(sat) at 500 µA base drive keeps the die dissipation at 30 mW, leaving margin for switching transients.

Active lifecycle — no end-of-life risk for ongoing designs

RoHS compliance is confirmed on the manufacturer's declaration, covering the EU directive requirements for the lead-free solder process.

Frequently asked questions

How do I get current pricing and availability for RN1103MFV,L3F?

Submit an RFQ through this listing.

What is the power dissipation rating for RN1103MFV,L3F?

Maximum power dissipation is 150 mW. At the rated Vce(sat) of 300 mV at 500 µA base drive and 5 mA collector current, the internal dissipation is well within this limit, but continuous duty at 100 mA requires derating per the package thermal resistance.

Will RN1103MFV,L3F drop into a board that was specified around RN1103,LF(CT without rewiring?

The RN1103MFV,L3F uses the same 22 kOhm base and emitter-base resistor values as the RN1103,LF(CT, but the package differs — SOT-723 (VESM) vs the RN1103,LF(CT's larger package. The pinout is not directly compatible; a board layout change is required.