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Toshiba Semiconductor HN3C10FUTE85LF — Memory (DRAM / SRAM / Flash / EEPROM)

Toshiba Semiconductor HN3C10FUTE85LF

MPNHN3C10FUTE85LF
End of Life

RF TRANS 2 NPN 12V 7GHZ US6

$0.56Ref. price · indicative, final on quote
Packaging6-TSSOP, SC-88, SOT-363
RoHSRoHS Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

HN3C10FUTE85LF specifications
ParameterValue
MountingSurface Mount
FET type2 NPN (Dual)
Voltage - collector emitter breakdown12V
Current - collector (Ic)80mA
DC current gain (hFE) (Min) @ ic, vce80 @ 20mA, 10V
Power - max200mW
Frequency - transition7GHz
Gain11.5dB
PackageTape & Reel (TR); Cut Tape (CT)
Case6-TSSOP, SC-88, SOT-363
Noise figure (dB typ @ f)1.1dB @ 1GHz