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Toshiba Semiconductor HN1C03FU-B,LF

Toshiba Semiconductor HN1C03FU-B,LF

MPNHN1C03FU-B,LF
End of Life

NPN + NPN IND. TRANSISTOR VCEO20

$0.39Ref. price · indicative, final on quote
Packaging6-TSSOP, SC-88, SOT-363
RoHSRoHS non-compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

HN1C03FU-B,LF specifications
ParameterValue
MountingSurface Mount
FET type2 NPN (Dual)
Voltage - collector emitter breakdown20V
Current - collector (Ic)300mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce350 @ 4mA, 2V
Power - max200mW
Frequency - transition30MHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case6-TSSOP, SC-88, SOT-363
Vce saturation (Max) @ ib, ic100mV @ 3mA, 30A