HN1C03FU-B,LF

Toshiba Semiconductor

NPN + NPN IND. TRANSISTOR VCEO20

Toshiba Semiconductor HN1C03FU-B,LF
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

HN1C03FU-B,LF specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET type2 NPN (Dual)
Voltage - collector emitter breakdown20V
Current - collector (Ic)300mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce350 @ 4mA, 2V
Power - max200mW
Frequency - transition30MHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case6-TSSOP, SC-88, SOT-363
Vce saturation (Max) @ ib, ic100mV @ 3mA, 30A
HN1C03FU-B,LF
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