HN1C01FU-GR,LF

Toshiba Semiconductor

TRANS 2NPN 50V 0.15A US6

Toshiba Semiconductor HN1C01FU-GR,LF
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

HN1C01FU-GR,LF specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET type2 NPN (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)150mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce200 @ 2mA, 6V
Power - max200mW
Frequency - transition80MHz
Operating temperature125°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case6-TSSOP, SC-88, SOT-363
Vce saturation (Max) @ ib, ic250mV @ 10mA, 100mA
HN1C01FU-GR,LF
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