CUS10F30,H3F

Toshiba Semiconductor

DIODE SCHOTTKY 30V 1A USC

Toshiba Semiconductor CUS10F30,H3F
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

CUS10F30,H3F specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Voltage - DC reverse (Vr)30 V
Voltage - forward (Vf) (Max) @ if500 mV @ 1 A
Current - reverse leakage @ vr50 µA @ 30 V
Current - average rectified1A
Operating temperature - junction125°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologySchottky
CaseSC-76, SOD-323
Capacitance @ vr,170pF @ 0V, 1MHz
CUS10F30,H3F
[ALLOC] verified
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