CMH04(TE12L,Q,M)
Toshiba Semiconductor
DIODE GEN PURP 200V 1A M-FLAT
[IN STOCK] In Stock: 48 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 200 V |
| Voltage - forward (Vf) (Max) @ if | 980 mV @ 1 A |
| Current - reverse leakage @ vr | 10 µA @ 200 V |
| Current - average rectified | 1A |
| Operating temperature - junction | -40°C ~ 150°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | Standard |
| Case | SOD-128 |
| Reverse recovery time | 35 ns |
CMH04(TE12L,Q,M)
[ALLOC] verified