2SJ168TE85LF

Toshiba Semiconductor

MOSFET P-CH 60V 200MA SC59

Toshiba Semiconductor 2SJ168TE85LF
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

2SJ168TE85LF specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C200mA (Ta)
Power dissipation200mW (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Rds on (Max) @ id, vgs2Ohm @ 50mA, 10V
Input capacitance (Ciss) (Max) @ vds85 pF @ 10 V
2SJ168TE85LF
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