Toshiba Semiconductor 2SA1162-Y,LXHF — Memory (DRAM / SRAM / Flash / EEPROM)
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Toshiba Semiconductor / Memory (DRAM / SRAM / Flash / EEPROM)

2SA1162-Y,LXHF PNP Transistor, 50V 150mA, AEC-Q101, S-Mini

MPN 2SA1162-Y,LXHF
End of Life Spot Stock · 24-48h Dispatch 100% Original Sealed

Toshiba 2SA1162-Y,LXHF PNP general-purpose transistor, 50 V Vce, 150 mA Ic, hFE 120 min, 80 MHz fT, 200 mW, AEC-Q101 qualified, S-Mini (SOT-23-3) package, Surface Mount.

In Stock: 17,872 pcs
MOQ: 1 pcs
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$0.38 / pc
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10+ pcs
$0.34
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[SPEC] Essential Parameters Snapshot Full Specifications (13)
Package / Case TO-236-3, SC-59, SOT-23-3

Full Technical Specifications

13 Parameters
2SA1162-Y,LXHF specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101
MountingSurface Mount
FET typePNP
Voltage - collector emitter breakdown50 V
Current - collector (Ic)150 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 2mA, 6V
Power - max200 mW
Frequency - transition80MHz
Operating temperature125°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Vce saturation (Max) @ ib, ic300mV @ 10mA, 100mA
Series Sibling Variants

Toshiba Semiconductor Automotive, AEC-Q101 Series Models

Sibling variants, package options, and speed/density grades in this Toshiba Semiconductor semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.

Technical Details & Description

The S-Mini package (SOT-23-3 footprint) keeps board area small, and the 80 MHz transition frequency gives enough bandwidth for switching regulators and pre-driver stages up to a few megahertz.

The DC current gain (hFE) is specified at 120 minimum when measured at 2 mA collector current and 6 V Vce. The Vce saturation of 300 mV at 10 mA base current and 100 mA collector current means the transistor stays cool when switching a load near its 150 mA ceiling; a higher saturation voltage would waste power as heat. Maximum power dissipation is 200 mW, so in a 25°C ambient the part can handle about 100 mA continuous at 2 V Vce before you need to check the derating curve. The collector cutoff current is just 100 nA, which matters in battery-powered circuits where off-state leakage drains the rail. Operating junction temperature is rated to 125°C, matching the AEC-Q101 requirement for under-hood or engine-bay environments.

It is a current-production device, so new designs can commit it to the BOM without obsolescence risk. The AEC-Q101 qualification also means the same part number is used across automotive and industrial builds, simplifying the approved-vendor list.

Frequently asked questions

What is the hFE of 2SA1162-Y?

The minimum DC current gain (hFE) is 120 at 2 mA collector current and 6 V Vce. The 'Y' suffix in the order code indicates this gain rank.

2SA1162-Y,LXHF
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