1SS427,L3M

Toshiba Semiconductor

DIODE GEN PURP 80V 100MA SOD923

Toshiba Semiconductor 1SS427,L3M
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MOQ 10 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

1SS427,L3M specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Voltage - DC reverse (Vr)80 V
Voltage - forward (Vf) (Max) @ if1.2 V @ 100 mA
Current - reverse leakage @ vr500 nA @ 80 V
Current - average rectified100mA
Operating temperature - junction-55°C ~ 150°C
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyStandard
CaseSOD-923
Capacitance @ vr,0.3pF @ 0V, 1MHz
Reverse recovery time1.6 ns
1SS427,L3M
[ALLOC] verified
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