1SS416CT,L3F

Toshiba Semiconductor

DIODE SCHOTTKY 30V 100MA CST2

Toshiba Semiconductor 1SS416CT,L3F
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

1SS416CT,L3F specifications
Parameter / AttributeSpecification / Value
Diode typeSchottky
MountingSurface Mount
Voltage - DC reverse (Vr)30 V
Voltage - forward (Vf) (Max) @ if500 mV @ 100 mA
Current - reverse leakage @ vr50 µA @ 30 V
Current - average rectified100mA
Operating temperature - junction125°C (Max)
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOD-882
Capacitance @ vr,15pF @ 0V, 1MHz
1SS416CT,L3F
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