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Toshiba Semiconductor 1SS387CT,L3F

1SS387CT,L3F Toshiba GP Diode 80V 100mA SOD-882 CST2

MPN1SS387CT,L3F
End of Life

DIODE GEN PURP 80V 100MA CST2

$0.24Ref. price · indicative, final on quote
PackagingSOD-882
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1SS387CT,L3F specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)80 V
Voltage - forward (Vf) (Max) @ if1.2 V @ 100 mA
Current - reverse leakage @ vr500 nA @ 80 V
Current - average rectified100mA
Operating temperature - junction150°C (Max)
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyStandard
CaseSOD-882
Capacitance @ vr,0.5pF @ 0V, 1MHz
Reverse recovery time4 ns