1SS387CT,L3F

Toshiba Semiconductor

DIODE GEN PURP 80V 100MA CST2

Toshiba Semiconductor 1SS387CT,L3F
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

1SS387CT,L3F specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Voltage - DC reverse (Vr)80 V
Voltage - forward (Vf) (Max) @ if1.2 V @ 100 mA
Current - reverse leakage @ vr500 nA @ 80 V
Current - average rectified100mA
Operating temperature - junction150°C (Max)
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyStandard
CaseSOD-882
Capacitance @ vr,0.5pF @ 0V, 1MHz
Reverse recovery time4 ns
1SS387CT,L3F
[ALLOC] verified
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