1SS367,H3F

Toshiba Semiconductor

DIODE SCHOTTKY 10V 100MA USC

Toshiba Semiconductor 1SS367,H3F
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MOQ 10 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

1SS367,H3F specifications
Parameter / AttributeSpecification / Value
Diode typeSchottky
MountingSurface Mount
Voltage - DC reverse (Vr)10 V
Voltage - forward (Vf) (Max) @ if500 mV @ 100 mA
Current - reverse leakage @ vr20 µA @ 10 V
Current - average rectified100mA
Operating temperature - junction125°C (Max)
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-76, SOD-323
Capacitance @ vr,40pF @ 0V, 1MHz
1SS367,H3F
[ALLOC] verified
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