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Toshiba Semiconductor 1SS193,LF

Toshiba Semiconductor 1SS193,LF

MPN1SS193,LF
End of Life

DIODE GEN PURP 80V 100MA S-MINI

$0.21Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1SS193,LF specifications
ParameterValue
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)80 V
Voltage - forward (Vf) (Max) @ if1.2 V @ 100 mA
Current - reverse leakage @ vr500 nA @ 80 V
Current - average rectified100mA
Operating temperature - junction125°C (Max)
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Capacitance @ vr,3pF @ 0V, 1MHz
Reverse recovery time4 ns