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Toshiba Semiconductor and Storage ULN2 Series

3 variants · Toshiba Semiconductor and Storage

About the Toshiba Semiconductor and Storage ULN2 Series

The Toshiba Semiconductor and Storage ULN2 Series series groups 3 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common current - collector (Ic) of 500mA, current - collector cutoff of - and DC current gain (hFE) (Min) @ ic, vce of 1000 @ 350mA, 2V. Variants differ by case, FET type and mounting, so you can match the exact case your application requires using the selection guide below. The range mixes active and legacy part numbers, so you can source both current Toshiba Semiconductor and Storage ULN2 Series variants and discontinued ones from a single page.

Select a variant by

Case
16-SOIC (0.154\", 3.90mm Width) · 18-DIP (0.300\", 7.62mm) · 18-SOIC (0.295\", 7.50mm Width)
FET type
7 NPN Darlington · 8 NPN Darlington
Mounting
Surface Mount · Through Hole
Package
Cut Tape (CT) · Tape & Reel (TR); Cut Tape (CT) · Tube
Power - max
1.25W · 1.31W · 1.47W

Shared specifications

Current - collector (Ic)
500mA
Current - collector cutoff
-
DC current gain (hFE) (Min) @ ic, vce
1000 @ 350mA, 2V
Frequency
-
Operating temperature
-40°C~85°C(TA)
Vce saturation (Max) @ ib, ic
1.6V @ 500µA, 350mA
Voltage - collector emitter breakdown
50V

Variant comparison

ParameterULN2004AFWG,N,EULN2803AFWG,C,ELULN2803APG,CN
Case16-SOIC (0.154\", 3.90mm Width)18-SOIC (0.295\", 7.50mm Width)18-DIP (0.300\", 7.62mm)
FET type7 NPN Darlington8 NPN Darlington8 NPN Darlington
MountingSurface MountSurface MountThrough Hole
PackageCut Tape (CT)Tape & Reel (TR); Cut Tape (CT)Tube
Power - max1.25W1.31W1.47W

Request a quote on any Toshiba Semiconductor and Storage ULN2 Series part number and we confirm price, availability and lead time per line — including end-of-life and allocation-constrained variants.

All variants