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Toshiba Semiconductor and Storage ULN2803AFWG,C,EL — Discrete Semiconductors

Toshiba Semiconductor and Storage ULN2803AFWG,C,EL

MPNULN2803AFWG,C,EL
Obsolete
$1.0600Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

ULN2803AFWG,C,EL specifications
ParameterValue
MountingSurface Mount
FET type8 NPN Darlington
Voltage - collector emitter breakdown50V
Current - collector (Ic)500mA
DC current gain (hFE) (Min) @ ic, vce1000 @ 350mA, 2V
Power - max1.31W
Operating temperature-40°C~85°C(TA)
PackageTape & Reel (TR); Cut Tape (CT)
Case18-SOIC (0.295\", 7.50mm Width)
Vce saturation (Max) @ ib, ic1.6V @ 500µA, 350mA