Toshiba Semiconductor and Storage ULN2004AFWG,N,E
MPNULN2004AFWG,N,E
Active
$0.7600Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| FET type | 7 NPN Darlington |
| Voltage - collector emitter breakdown | 50V |
| Current - collector (Ic) | 500mA |
| DC current gain (hFE) (Min) @ ic, vce | 1000 @ 350mA, 2V |
| Power - max | 1.25W |
| Operating temperature | -40°C~85°C(TA) |
| Package | Cut Tape (CT) |
| Case | 16-SOIC (0.154\", 3.90mm Width) |
| Vce saturation (Max) @ ib, ic | 1.6V @ 500µA, 350mA |