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Toshiba Semiconductor and Storage ULN2803APG,CN — Discrete Semiconductors

Toshiba Semiconductor and Storage ULN2803APG,CN

MPNULN2803APG,CN
Obsolete
$2.7100Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

ULN2803APG,CN specifications
ParameterValue
MountingThrough Hole
FET type8 NPN Darlington
Voltage - collector emitter breakdown50V
Current - collector (Ic)500mA
DC current gain (hFE) (Min) @ ic, vce1000 @ 350mA, 2V
Power - max1.47W
Operating temperature-40°C~85°C(TA)
PackageTube
Case18-DIP (0.300\", 7.62mm)
Vce saturation (Max) @ ib, ic1.6V @ 500µA, 350mA