TPCC8104,L1Q(CM
Toshiba Semiconductor and Storage
[IN STOCK] In Stock: 19 pcs
MOQ 1 · Tape & Reel (TR) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | U-MOSVI |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 20A (Ta) |
| Power dissipation | 700mW (Ta), 27W (Tc) |
| Operating temperature | 150°C |
| Package | Tape & Reel (TR) |
| Vgs | +20V, -25V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 2V @ 500µA |
| Rds on (Max) @ id, vgs | 8.8mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 58 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2260 pF @ 10 V |
TPCC8104,L1Q(CM
[ALLOC] verified