BAV99W,LF

Toshiba Semiconductor and Storage

X34 PB-F SWITCHING DIODE USM

Toshiba Semiconductor and Storage BAV99W,LF
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MOQ 5 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BAV99W,LF specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Voltage - DC reverse (Vr)100 V
Voltage - forward (Vf) (Max) @ if1.25 V @ 150 mA
Current - reverse leakage @ vr200 nA @ 80 V
Current - average rectified (Io) (per diode)150mA
Operating temperature - junction150°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyStandard
CaseSC-70, SOT-323
Diode configuration1 Pair Series Connection
Reverse recovery time4 ns
BAV99W,LF
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