Toshiba Semiconductor and Storage 4N35(SHORT,F)
MPN4N35(SHORT,F)
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Input type | DC |
| Output type | Transistor with Base |
| Mounting | Through Hole |
| Voltage - isolation | 2500Vrms |
| Voltage - output | 30V |
| Voltage - forward (Vf) | 1.15V |
| Current - output (Channel) | 100mA |
| Current transfer ratio | 40% @ 10mA |
| Current - DC forward (If) | 60 mA |
| Operating temperature | -55°C~100°C |
| Package | Tube |
| Case | 6-DIP (0.300\", 7.62mm) |
| Channels | 1 |
| Vce saturation | 300mV |
| Turn on (Turn off time) | 3µs, 3µs |