2SK879-GR(TE85L,F)
Toshiba Semiconductor and Storage
JFET N-CH 0.1W USM
[IN STOCK] In Stock: 72 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Voltage - cutoff (VGS off) @ id | 400 mV @ 100 nA |
| Current - drain (Idss) @ vds (Vgs=0) | 2.6 mA @ 10 V |
| Power - max | 100 mW |
| Operating temperature | 125°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | SC-70, SOT-323 |
| Input capacitance (Ciss) (Max) @ vds | 8.2pF @ 10V |
2SK879-GR(TE85L,F)
[ALLOC] verified