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Toshiba Semiconductor and Storage 2SC6026MFVGR,L3F — Discrete Semiconductors

Toshiba Semiconductor and Storage 2SC6026MFVGR,L3F

MPN2SC6026MFVGR,L3F
Active

TRANS NPN 50V 0.15A VESM

$0.2000Ref. price · indicative, final on quote
PackagingSOT-723
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SC6026MFVGR,L3F specifications
ParameterValue
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown50 V
Current - collector (Ic)150 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce200 @ 2mA, 6V
Power - max150 mW
Frequency60MHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
CaseSOT-723
Vce saturation (Max) @ ib, ic250mV @ 10mA, 100mA