2SC6026MFVGR,L3F

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A VESM

Toshiba Semiconductor and Storage 2SC6026MFVGR,L3F
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MOQ 10 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

2SC6026MFVGR,L3F specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown50 V
Current - collector (Ic)150 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce200 @ 2mA, 6V
Power - max150 mW
Frequency - transition60MHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
CaseSOT-723
Vce saturation (Max) @ ib, ic250mV @ 10mA, 100mA
2SC6026MFVGR,L3F
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