Toshiba Semiconductor and Storage 2SC4682,T6F(J
MPN2SC4682,T6F(J
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Through Hole |
| FET type | NPN |
| Voltage - collector emitter breakdown | 15 V |
| Current - collector (Ic) | 3 A |
| Current - collector cutoff | 1µA (ICBO) |
| DC current gain (hFE) (Min) @ ic, vce | 800 @ 500mA, 1V |
| Power - max | 900 mW |
| Frequency - transition | 150MHz |
| Operating temperature | 150°C(TJ) |
| Package | Bulk |
| Case | TO-226-3, TO-92-3 Long Body |
| Vce saturation (Max) @ ib, ic | 500mV @ 30mA, 3A |