Toshiba Semiconductor and Storage 2SC4604,T6F(J
MPN2SC4604,T6F(J
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Through Hole |
| FET type | NPN |
| Voltage - collector emitter breakdown | 50 V |
| Current - collector (Ic) | 3 A |
| Current - collector cutoff | 100nA (ICBO) |
| DC current gain (hFE) (Min) @ ic, vce | 120 @ 100mA, 2V |
| Power - max | 900 mW |
| Frequency - transition | 100MHz |
| Operating temperature | 150°C(TJ) |
| Package | Bulk |
| Case | TO-226-3, TO-92-3 Long Body |
| Vce saturation (Max) @ ib, ic | 500mV @ 75mA, 1.5A |