2SC2713-BL,LF

Toshiba Semiconductor and Storage

TRANS NPN 120V 0.1A TO236

Toshiba Semiconductor and Storage 2SC2713-BL,LF
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MOQ 10 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

2SC2713-BL,LF specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown120 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce350 @ 2mA, 6V
Power - max150 mW
Frequency - transition100MHz
Operating temperature125°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Vce saturation (Max) @ ib, ic300mV @ 1mA, 10mA
2SC2713-BL,LF
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