Toshiba Semiconductor and Storage 2SC2482(T6TOJS,F,M
MPN2SC2482(T6TOJS,F,M
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Through Hole |
| FET type | NPN |
| Voltage - collector emitter breakdown | 300 V |
| Current - collector (Ic) | 100 mA |
| Current - collector cutoff | 1µA (ICBO) |
| DC current gain (hFE) (Min) @ ic, vce | 30 @ 20mA, 10V |
| Power - max | 900 mW |
| Frequency - transition | 50MHz |
| Operating temperature | 150°C (TJ) |
| Package | Bulk |
| Case | TO-226-3, TO-92-3 Long Body |
| Vce saturation (Max) @ ib, ic | 1V @ 1mA, 10mA |