Toshiba Semiconductor and Storage 2SC1627A-Y,PASF(M
MPN2SC1627A-Y,PASF(M
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Through Hole |
| FET type | NPN |
| Voltage - collector emitter breakdown | 80 V |
| Current - collector (Ic) | 400 mA |
| Current - collector cutoff | 100nA (ICBO) |
| DC current gain (hFE) (Min) @ ic, vce | 70 @ 50mA, 2V |
| Power - max | 800 mW |
| Frequency - transition | 100MHz |
| Operating temperature | 150°C (TJ) |
| Package | Bulk |
| Case | TO-226-3, TO-92-3 Long Body |
| Vce saturation (Max) @ ib, ic | 400mV @ 20mA, 200A |