XP231P0201TR-G

Torex Semiconductor Ltd

MOSFET P-CH 30V 200MA SOT23

Torex Semiconductor Ltd XP231P0201TR-G
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MOQ 2 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

XP231P0201TR-G specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C200mA (Ta)
Power dissipation400mW (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.2V @ 250µA
Rds on (Max) @ id, vgs5Ohm @ 100mA, 4.5V
Input capacitance (Ciss) (Max) @ vds34 pF @ 10 V
XP231P0201TR-G
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