UCC27712DR

Texas Instruments

Texas Instruments UCC27712DR half-bridge gate driver, 1.8A source / 2.8A sink peak output, 600V bootstrap, 16ns rise / 10ns fall, 8-SOIC, -40°C to 125°C.

UCC27712DR
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

UCC27712DR specifications
Parameter / AttributeSpecification / Value
Gate typeIGBT, N-Channel, P-Channel MOSFET
Channel typeIndependent
MountingSurface Mount
Supply voltage10V ~ 20V
Logic voltage - VIL, VIH1.5V, 1.6V
High side voltage - max (Bootstrap)600 V
Current - peak output (Source, sink)1.8A, 2.8A
Operating temperature-40°C~125°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)16ns, 10ns

Technical details

UCC27712DR
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