UCC27611DRVT

Texas Instruments

Texas Instruments UCC27611DRVT, single-channel low-side gate driver for N-channel MOSFETs, 4A source / 6A sink peak output, 5ns rise/fall, 4V to 18V supply, 6-WSON (2x2) package, -40°C to 140°C junction temperature.

Texas Instruments UCC27611DRVT
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[IN STOCK] In Stock: 411 pcs
$2.58/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

UCC27611DRVT specifications
Parameter / AttributeSpecification / Value
Gate typeN-Channel MOSFET
Input typeInverting, Non-Inverting
Channel typeSingle
MountingSurface Mount
Supply voltage4V ~ 18V
Logic voltage - VIL, VIH1.3V, 1.85V
Current - peak output (Source, sink)4A, 6A
Operating temperature-40°C~140°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case6-WDFN Exposed Pad
Number of drivers1
Driven configurationLow-Side
Rise (Fall time)5ns, 5ns

Technical details

Low-side driver with 4A/6A peak and 5ns edges

The UCC27611DRVT is a single-channel, low-side gate driver from Texas Instruments designed to drive N-channel MOSFETs. It delivers a peak output current of 4A source and 6A sink, with a typical rise and fall time of 5ns each — fast enough to minimise switching losses in a 100-500 kHz converter, but the buyer should verify the gate-drive loop inductance stays under a few nH to avoid ringing on the gate node.

Supply and logic interface

The supply voltage range spans 4V to 18V, covering common bias rails from a 5V logic supply to a 12V or 15V industrial bus. The logic input thresholds are 1.3V (VIL) and 1.85V (VIH), so a 3.3V or 5V PWM signal from an MCU or DSP drives it directly without a level shifter.

Package and thermal capability

The 140°C ceiling gives headroom above the usual 125°C industrial limit — useful when the driver sits near a hot MOSFET or in a confined enclosure.

Active status and compliance

It is ROHS3 compliant, which removes the need for a lead-free exemption review in most BOMs.

UCC27611DRVT
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