UCC27524DR

Texas Instruments

Texas Instruments UCC27524DR, dual low-side gate driver, 5A peak source/sink, 4.5V to 18V supply, 7ns/6ns rise/fall, -40°C to 140°C junction, 8-SOIC package.

UCC27524DR
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

UCC27524DR specifications
Parameter / AttributeSpecification / Value
Gate typeIGBT, N-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage4.5V ~ 18V
Logic voltage - VIL, VIH1V, 2.3V
Current - peak output (Source, sink)5A, 5A
Operating temperature-40°C~140°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationLow-Side
Rise (Fall time)7ns, 6ns

Technical details

Switching speed and drive strength

The 5 A peak drive current ensures the gate voltage transitions cleanly even with high input capacitance loads. The two channels are independent and non-inverting, so each can be driven by separate PWM signals.

UCC27524DR
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