UCC27523D

Texas Instruments

Texas Instruments UCC27523D, dual low-side gate driver, 5A peak source/sink, 4.5V to 18V supply, 7ns/6ns rise/fall, inverting inputs, 8-SOIC surface-mount package.

UCC27523D
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Technical specifications

UCC27523D specifications
Parameter / AttributeSpecification / Value
Gate typeIGBT, N-Channel MOSFET
Input typeInverting
Channel typeIndependent
MountingSurface Mount
Supply voltage4.5V ~ 18V
Logic voltage - VIL, VIH1V, 2.3V
Current - peak output (Source, sink)5A, 5A
Operating temperature-40°C~140°C(TJ)
PackageTube
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationLow-Side
Rise (Fall time)7ns, 6ns

Technical details

The UCC27523D: It drives both N-channel MOSFETs and IGBTs, with a supply range of 4.5V to 18V that covers common gate-drive rails for industrial and telecom power stages. The inverting input logic (VIL = 1V, VIH = 2.3V) means the output goes high when the input is pulled low — handy for designs where the PWM controller has an active-low output or you need to invert the control signal without an extra inverter gate.

Switching speed and gate charge budget

Rise and fall times are 7ns and 6ns typical, respectively. That edge rate keeps switching losses low in the power FET or IGBT, but it also means the layout loop from the driver output to the gate resistor and back to the source/emitter needs to be tight — a few nH of stray inductance will ring the gate waveform. Each channel operates independently, so you can drive two separate power devices with independent PWM signals, or parallel the two channels for a single device needing higher peak current (10A effective) by tying the inputs and outputs together.

UCC27523D
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