UCC27325DR

Texas Instruments

Texas Instruments UCC27325DR, low-side gate driver, 4A peak source/sink, dual independent channels, N/P-channel MOSFET gate type, 8-SOIC package, -55 to 150°C junction temperature.

UCC27325DR
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[IN STOCK] In Stock: 52 pcs
$1.88/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

UCC27325DR specifications
Parameter / AttributeSpecification / Value
Gate typeN-Channel, P-Channel MOSFET
Input typeInverting, Non-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage4.5V ~ 15V
Logic voltage - VIL, VIH1V, 2V
Current - peak output (Source, sink)4A, 4A
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationLow-Side
Rise (Fall time)20ns, 15ns

Technical details

This combination means it can charge and discharge the gate capacitance of a medium-power MOSFET fast enough to keep switching losses low, without the slow edge that would push the device into its linear region during transition. The independent channel architecture lets you drive two separate MOSFETs — for example, the high-side and low-side of a synchronous buck converter — with separate input signals that can be inverting or non-inverting per channel.

The supply voltage range runs from 4.5 V to 15 V, covering the common bias rails for 5 V logic-driven gate drivers and 12 V automotive or industrial power stages. The logic input thresholds are 1 V (VIL) and 2 V (VIH), so it interfaces directly with 3.3 V or 5 V logic without external level shifting.

Package and sourcing posture

The UCC27325DR is supplied in an 8-pin SOIC package (8-SOIC, 3.90 mm width) for surface-mount assembly.

UCC27325DR
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