UCC27322DR

Texas Instruments

Texas Instruments UCC27322DR low-side gate driver, single-channel, 9A peak source/sink, 20ns typ rise/fall, 4V to 15V supply, 8-SOIC package, -40°C to 105°C.

UCC27322DR
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

UCC27322DR specifications
Parameter / AttributeSpecification / Value
Gate typeN-Channel, P-Channel MOSFET
Input typeNon-Inverting
Channel typeSingle
MountingSurface Mount
Supply voltage4V ~ 15V
Logic voltage - VIL, VIH1.1V, 2.7V
Current - peak output (Source, sink)9A, 9A
Operating temperature-40°C~105°C(TA)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers1
Driven configurationLow-Side
Rise (Fall time)20ns, 20ns

Technical details

9 A peak drive — what it buys you on the bench

The UCC27322DR delivers 9 A peak source and 9 A peak sink current, enough to charge and discharge the gate capacitance of a large IGBT or paralleled MOSFET bank in the 20 ns typical rise and fall window. That 20 ns edge rate means the Miller plateau is traversed quickly — switching losses in the transistor stay low even at moderate frequencies, but the PCB loop inductance from the driver output to the gate resistor and back to the source kelvin connection must be kept under a few nH or the ringing will exceed the Vgs abs-max. The 4 V to 15 V supply range covers the standard bias rails for both logic-level and standard MOSFETs. At the low end, 4 V still gives enough headroom to fully enhance a logic-level FET; at 15 V the driver saturates a standard-gate transistor without exceeding the typical 20 V Vgs limit.

Logic interface and temperature grade

The non-inverting input means the output follows the input polarity — no inversion to account for in the control loop.

UCC27322DR
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